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1

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

R. Degraeve, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 288 KB

english, 1999

2

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Improvements of NBTI reliability in SiGe p-FETs

Franco, J., Kaczer, B., Cho, M., Eneman, G., Groeseneken, G., Grasser, T.

Year:

2010

Language:

english

File:

PDF, 622 KB

english, 2010

3

NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase

A. Shickova, B. Kaczer, A. Veloso, M. Aoulaiche, M. Houssa, H. Maes, G. Groeseneken, J.A. Kittl

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 138 KB

english, 2007

4

A CMOS circuit for evaluating the NBTI over a wide frequency range

R. Fernández-García, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 1.58 MB

english, 2009

5

Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)

T. Grasser, B. Kaczer, W. Goes, Th. Aichinger, Ph. Hehenberger, M. Nelhiebel

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 516 KB

english, 2009

6

FinFET and MOSFET preliminary comparison of gate oxide reliability

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, B. Kaczer, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 286 KB

english, 2006

7

High-resolution SILC measurements of thin SiO2 at ultra low voltages

S. Aresu, W. De Ceuninck, R. Dreesen, K. Croes, E. Andries, J. Manca, L. De Schepper, R. Degraeve, B. Kaczer, M. D’Olieslaeger, J. D’Haen

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 919 KB

2002

8

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance

Robert O’Connor, Greg Hughes, Robin Degraeve, Ben Kaczer

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 203 KB

english, 2005

9

Ultra-thin oxide reliability: searching for the thickness scaling limit

R Degraeve, B Kaczer, G Groeseneken

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 327 KB

english, 2000

10

Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices

Griffoni, A., Shih-Hung Chen, Thijs, S., Kaczer, B., Franco, J., Linten, D., De Keersgieter, A., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.49 MB

english, 2011

11

[IEEE 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - singapore (2008.07.7-2008.07.11)] 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Review of reliability issues in high-k/metal gate stacks

Degraeve, R., Aoulaiche, M., Kaczer, B., Roussel, Ph., Kauerauf, T., Sahhaf, S., Groeseneken, G.

Year:

2008

Language:

english

File:

PDF, 360 KB

english, 2008

12

[IEEE 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Bangalore, India (2007.07.11-2007.07.13)] 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Proof-of-Concept Structure for Investigation of Successive Soft Gate Oxide Breakdowns in Two Dimensions

Kaczer, B., Fernandez, R., Nackaert, A., Chiarella, T., Groeseneken, G.

Year:

2007

Language:

english

File:

PDF, 3.88 MB

english, 2007

13

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications

Swerts, Johan, Salimullah, M.M., Popovici, M., Kim, M.-S., Pawlak, M.A., Delabie, Annelies, Schaekers, M., Tomida, K., Kaczer, B., Opsomer, K., Vrancken, C., Debusschere, I, Altimime, L., Kittl, J.A.,

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

14

[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Kaczer, B., Ceric, H., Grasser, T.

Year:

2014

Language:

english

File:

PDF, 627 KB

english, 2014

15

Commentary: Forgetting the best when predicting the worst: preliminary observations on neural circuit function in adolescent social anxiety

Fernández, Rodrigo S., Pedreira, María E., Boccia, Mariano M., Kaczer, Laura

Journal:

Frontiers in Psychology

Year:

2018

Language:

english

File:

PDF, 210 KB

english, 2018

16

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

Journal:

Year:

2018

Language:

english

File:

PDF, 545 KB

english, 2018

17

Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs

Makarov, Alexander, Kaczer, Ben, Roussel, Philippe, Chasin, Adrian, Grill, Alexander, Vandemaele, Michiel, Hellings, Geert, El-Sayed, Al-Moatasem, Grasser, Tibor, Linten, Dimitri, Tyaginov, Stanislav

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 1.56 MB

english, 2019

18

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping

Xiang, Y., Verhulst, A. S., Parvais, B., Horiguchi, N., Groeseneken, G., Houdt, J. Van, Bardon, M. Garcia, Alam, Md Nur K., Thesberg, M., Kaczer, B., Roussel, P., Popovici, M. I., Ragnarsson, L.-A., T

Year:

2019

Language:

english

File:

PDF, 3.51 MB

english, 2019

19

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability

B. Kaczer, R. Degraeve, Ph. Roussel, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 633 KB

english, 2007

20

A new method for the analysis of high-resolution SILC data

S. Aresu, W. De Ceuninck, G. Knuyt, J. Mertens, J. Manca, L. De Schepper, R. Degraeve, B. Kaczer, M. D’Olieslaeger, J. D’Haen

Journal:

Microelectronics Reliability

Year:

2003

File:

PDF, 492 KB

2003

21

Easy magnetization axes in materials with combined cubic and uniaxial anisotropies

I. Tomáš, L. Murtinová, J. Kaczér

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 420 KB

english, 1983

22

Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

B. Kaczer, V. Arkhipov, M. Jurczak, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 165 KB

english, 2005

23

Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study

B. Kaczer, R. Degraeve, M. Rasras, A. De Keersgieter, K. Van de Mieroop, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 346 KB

english, 2002

24

The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films

Kaczer, B., Degraeve, R., Pangon, N., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 200 KB

english, 2000

25

Stripe and bubble domains in CoCr films

Simsova, J., Gemperle, R., Kaczer, J., Lodder, J.C.

Journal:

IEEE Transactions on Magnetics

Year:

1990

Language:

english

File:

PDF, 410 KB

english, 1990

26

Internal magnetic domain-structure investigations in iron silicon single crystals

Frank, F., Lang, A., Kaczer, J., Polcarov, M.

Journal:

IEEE Transactions on Magnetics

Year:

1966

Language:

english

File:

PDF, 195 KB

english, 1966

27

The domain structure of uniaxial ferromagnets

Journal:

IEEE Transactions on Magnetics

Year:

1968

Language:

english

File:

PDF, 116 KB

english, 1968

28

Ferromagnetic domains in uniaxial materials

Journal:

IEEE Transactions on Magnetics

Year:

1970

Language:

english

File:

PDF, 446 KB

english, 1970

29

Defect-centric perspective of time-dependent BTI variability

M. Toledano-Luque, B. Kaczer, J. Franco, Ph.J. Roussel, T. Grasser, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 1.88 MB

english, 2012

30

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic

J. Franco, S. Graziano, B. Kaczer, F. Crupi, L.-Å. Ragnarsson, T. Grasser, G. Groeseneken

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 864 KB

english, 2012

31

[IEEE 2011 IEEE International Symposium on Circuits and Systems (ISCAS) - Rio de Janeiro, Brazil (2011.05.15-2011.05.18)] 2011 IEEE International Symposium of Circuits and Systems (ISCAS) - Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling

Crupi, Felice, Alioto, Massimo, Franco, Jacopo, Magnone, Paolo, Kaczer, Ben, Groeseneken, Guido, Mitard, Jerome, Witters, Liesbeth, Hoffmann, Thomas Y.

Year:

2011

Language:

english

File:

PDF, 343 KB

english, 2011

32

Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics

Roussel, P.J., Degraeve, R., Van den Bosch, G.V., Kaczer, B., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2001

Language:

english

File:

PDF, 221 KB

english, 2001

33

Comparison of Reaction-Diffusion and Atomistic Trap-Based BTI Models for Logic Gates

Kukner, Halil, Khan, Seyab, Weckx, Pieter, Raghavan, Praveen, Hamdioui, Said, Kaczer, Ben, Catthoor, Francky, Van der Perre, Liesbet, Lauwereins, Rudy, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2014

Language:

english

File:

PDF, 1.02 MB

english, 2014

34

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

Bina, Markus, Tyaginov, Stanislav, Franco, Jacopo, Rupp, Karl, Wimmer, Yannick, Osintsev, Dmitry, Kaczer, Ben, Grasser, Tibor

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.05 MB

english, 2014

35

[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Oxide traps in MOS transistors: Semi-automatic extraction of trap parameters from time dependent defect spectroscopy

Wagner, P.-J., Grasser, T., Reisinger, H., Kaczer, B.

Year:

2010

Language:

english

File:

PDF, 586 KB

english, 2010

36

[IEEE ESSDERC 2003. 33rd European Solid-State Device Research - ESSDERC '03 - Estoril, Portugal (16-18 Sept. 2003)] Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) - Experimental verification of SRAM cell functionality after hard and soft gate oxide breakdowns

Kaczer, B., Degraeve, R., Augendre, E., Jurczak, M., Groeseneken, G.

Year:

2003

Language:

english

File:

PDF, 290 KB

english, 2003

37

[IEEE 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Marina Bay Sands, Singapore (2014.6.30-2014.7.4)] Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

Bury, Erik, Degraeve, Robin, Cho, Moon Ju, Kaczer, Ben, Goes, Wolfgang, Grasser, Tibor, Horiguchi, Naoto, Groeseneken, Guido

Year:

2014

Language:

english

File:

PDF, 3.96 MB

english, 2014

38

[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: Challenges and solutions

Groeseneken, G., Aoulaiche, M., Cho, M., Franco, J., Kaczer, B., Kauerauf, T., Mitard, J., Ragnarsson, Lars-Ake, Roussel, P., Toledano-Luque, M.

Year:

2013

File:

PDF, 1.02 MB

2013

39

A comparative study of the oxide breakdown in short-channel nmosfets and pmosfets stressed in inversion and in accumulation regimes

Crupi, F., Kaczer, B., Degraeve, R., De Keersgieter, A., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2003

Language:

english

File:

PDF, 393 KB

english, 2003

40

[IEEE 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Bangalore, India (2007.07.11-2007.07.13)] 2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Challenges in Reliability Assessment of Advanced CMOS Technologies

Groeseneken, Guido, Degraeve, Robin, Kaczer, Ben, Roussel, Philippe

Year:

2007

Language:

english

File:

PDF, 3.33 MB

english, 2007

41

Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models

Grasser, T., Gos, W., Kaczer, B.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2008

Language:

english

File:

PDF, 750 KB

english, 2008

42

[IEEE 64th ARFTG Microwave Measurements Conference, Fall 2004. - Orlando, FL, USA (Dec. 2-3, 2004)] 64th ARFTG Microwave Measurements Conference, Fall 2004. - Analysing impact of mosfet oxide breakdown by small- and large-signal HF measurements

Schreurs, D., Pantisano, L., Kaczer, B.

Year:

2004

Language:

english

File:

PDF, 1010 KB

english, 2004

43

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Grasser, T., Reisinger, H., Wagner, P.-J., Schanovsky, F., Goes, W., Kaczer, B.

Year:

2010

Language:

english

File:

PDF, 521 KB

english, 2010

44

Energy distribution of positive charges in high-k dielectric

Hatta, S.W.M., Ji, Z., Zhang, J.F., Zhang, W.D., Soin, N., Kaczer, B., Gendt, S.D., Groeseneken, G.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 918 KB

english, 2014

45

Circuit Design-Oriented Stochastic Piecewise Modeling of the Postbreakdown Gate Current in MOSFETs: Application to Ring Oscillators

Martin-Martinez, Javier, Kaczer, Ben, Degraeve, Robin, Roussel, Philippe J., Rodriguez, Rosana, Nafria, Montserrat, Aymerich, Xavier, Dierickx, B., Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2012

Language:

english

File:

PDF, 749 KB

english, 2012

46

[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Understanding correlated drain and gate current fluctuations

Goes, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T.

Year:

2013

Language:

english

File:

PDF, 423 KB

english, 2013

47

Improved Channel Hot-Carrier Reliability in $p$-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process

Cho, Moonju, Arimura, Hiroaki, Lee, Jae Woo, Kaczer, Ben, Veloso, Anabela, Boccardi, Guillaume, Ragnarsson, Lars-Ake, Kauerauf, Thomas, Horiguchi, Naoto, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2014

Language:

english

File:

PDF, 992 KB

english, 2014

48

Degradation and breakdown of plasma oxidized magnetic tunnel junctions: Single trap creation in Al/sub 2/O/sub 3/ tunnel barriers

Das, J., Degraeve, R., Kaczer, B., Boeve, H., Vanhelmont, F., Groeseneken, G., Borghs, G., De Boeck, J.

Journal:

IEEE Transactions on Magnetics

Year:

2003

Language:

english

File:

PDF, 237 KB

english, 2003

49

[IEEE 2005 Symposium on VLSI Technology - Kyoto, Japan (2005.06.14-2005.06.16)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Layout impact on the performance of a locally strained PMOSFET

Eneman, S., Verheyen, P., Rooyackers, R., Nouri, F., Washington, L., Degraeve, R., Kaczer, B., Moroz, V., De Keersgieter, A., Schreutelkamp, R., Kawaguchi, M., Kim, Y., Samoilov, A., Smith, L., Absil,

Year:

2005

Language:

english

File:

PDF, 404 KB

english, 2005

50

[IEEE 2012 4th IEEE International Memory Workshop (IMW) - Milan, Italy (2012.05.20-2012.05.23)] 2012 4th IEEE International Memory Workshop - Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM Capacitor for the DRAM Application

Kim, M.-S., Kaczer, B., Starschich, S., Popovici, M., Swerts, J., Richard, O., Tomida, K., Vrancken, C., Van Elshocht, S., Debusschere, I., Altimime, L., Kittl, J. A.

Year:

2012

Language:

english

File:

PDF, 706 KB

english, 2012